 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| N-CHANNEL 100V - 0.009 - 120A DPAK/TO-220 STripFETTM II POWER MOSFET TYPE STB120NF10 STP120NF10 s s s s STB120NF10 STP120NF10 VDSS 100 V 100 V RDS(on) < 0.0105 < 0.0105 ID 120 A 120 A s TYPICAL RDS(on) = 0.009 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION SURFACE-MOUNTING DPAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") 3 1 3 1 2 D2PAK TO-263 (Suffix "T4") TO-220 DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize the on-resistance. It is therefore suitable as primary switch in advanced high-efficiency, highfrequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s AUDIO AMPLIFIERS s POWER TOOLS Ordering Information SALES TYPE STB120NF10 STP120NF10 MARKING B120NF10 P120NF10 PACKAGE TO-263 TO-220 PACKAGING TAPE & REEL TUBE ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(*) Ptot dv/dt (1) EAS(2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 100 100 20 120 85 480 312 2.08 10 550 -55 to 175 Unit V V V A A A W W/C V/ns mJ C (*) Pulse width limited by safe operating area. May 2003 (1) ISD 120A, di/dt 300A/s, VDD V (BR)DSS, T j TJMAX (2) Starting T j = 25 oC, ID = 60A, VDD = 50V 1/10 STB120NF10 STP120NF10 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 0.48 62.5 300 C/W C/W C ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 20 V Min. 100 1 10 100 Typ. Max. Unit V A A nA ON (*) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V ID = 250 A ID = 60 A Min. 2 0.009 Typ. Max. 4 0.0105 Unit V DYNAMIC Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15 V ID = 60 A Min. Typ. TBD 5200 785 325 Max. Unit S pF pF pF VDS = 25V f = 1 MHz VGS = 0 2/10 STB120NF10 STP120NF10 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 60 A VDD = 50 V RG = 4.7 VGS = 10 V (Resistive Load, Figure 3) VDD=80 V ID=120 A VGS=10 V Min. Typ. 25 90 172 32 64 233 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions ID = 60 A VDD = 50 V RG = 4.7, VGS = 10 V (Resistive Load, Figure 3) Min. Typ. 132 68 Max. Unit ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (*) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current 1.5 %. Test Conditions Min. Typ. Max. 120 480 Unit A A V ns nC A ISD = 120 A VGS = 0 152 760 10 1.3 di/dt = 100A/s ISD = 120 A VDD = 40 V Tj = 150C (see test circuit, Figure 5) (*)Pulsed: Pulse duration = 300 s, duty cycle (*)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/10 STB120NF10 STP120NF10 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/10 STB120NF10 STP120NF10 Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature . . 5/10 STB120NF10 STP120NF10 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/10 STB120NF10 STP120NF10 D2PAK MECHANICAL DATA DIM. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 8 0 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.591 0.050 0.055 0.094 0.015 8 mm. MIN. 4.4 2.49 0.03 0.7 1.14 0.45 1.21 8.95 8 10.4 0.394 0.334 0.208 0.624 0.055 0.069 0.126 TYP. MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.028 0.045 0.018 0.048 0.352 0.315 0.409 inch. TYP. TYP. 0.181 0.106 0.009 0.037 0.067 0.024 0.054 0.368 7/10 STB120NF10 STP120NF10 TO-220 MECHANICAL DATA DIM. A C D E F F1 F2 G G1 H2 L2 L3 L4 L5 L6 L7 L9 DIA 13 2.65 15.25 6.20 3.50 3.75 mm. MIN. 4.4 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10 16.40 28.90 14 2.95 15.75 6.60 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 TYP. MAX. 4.6 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 1.137 0.551 0.116 0.620 0.260 0.154 0.151 inch. TYP. TYP. 0.181 0.051 0.107 0.027 0.034 0.067 0.067 0.203 0.106 0.409 8/10 STB120NF10 STP120NF10 D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 BASE QTY 1000 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.795 0.960 3.937 1.197 BULK QTY 1000 1.039 0.520 MIN. inch MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 0.35 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 MIN. 0.413 0.618 0.059 0.062 0.065 0.449 0.189 0.153 0.468 0075 1.574 .0.0098 0.933 0.0137 0.956 inch MAX. 0.421 0.626 0.063 0.063 0.073 0.456 0.197 0.161 0.476 0.082 * on sales type 9/10 STB120NF10 STP120NF10 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 10/10 |
Price & Availability of STP120NF10
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |